Low-loss CPW lines on surface stabilized high-resistivity silicon

@article{Gamble1999LowlossCL,
  title={Low-loss CPW lines on surface stabilized high-resistivity silicon},
  author={H. S. Gamble and B. Mervyn Armstrong and S A Mitchell and Y.-f. Wu and V. F. Fusco and J. Stewart},
  journal={IEEE Microwave and Guided Wave Letters},
  year={1999},
  volume={9},
  pages={395-397}
}
The authors propose a solution to the surface conduction problem in silicon monolithic microwave integrated circuits (MMIC's). An LPCVD polycrystalline silicon layer is deposited over the surface of a high-resistivity silicon wafer which is then covered with a silicon dioxide layer. The polycrystalline silicon layer effectively removes, through traps, any free electrons or holes that may have been induced at the oxide-silicon interface. The CPW lines with 1.25-μm aluminum metallization on… CONTINUE READING
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