Low-leakage n- and p-channel Silicon-gate FET's with an SiO2-Si3N4-gate insulator

n-channel and p-channel silicon-gate FET's are fabricated using a 300-Å SiO<inf>2</inf>-300-Å Si<inf>3</inf>N<inf>4</inf>gate insulator. These devices have low leakage and are suitable for dynamic FET-memory applications. Very low n-channel leakage is achieved by using an n- or p-doped polycrystalline-silicon field shield. One-device dynamic memory cells… CONTINUE READING