Low frequency oscillations in undoped GaAs as a probe to deep level parameters

@article{Goronkin1984LowFO,
  title={Low frequency oscillations in undoped GaAs as a probe to deep level parameters},
  author={H. Goronkin and G. Maracas},
  journal={1984 International Electron Devices Meeting},
  year={1984},
  pages={182-185}
}
Low frequency oscillations that produce 1/f noise in GaAs FETS are characterized using a new method. The low frequency current oscillations of undoped LEC GaAs substrates are used to determine deep level energies, cross sections and concentrations. The frequency is seen to vary almost four orders of magnitude in a 50°K temperature range. Plotting the… CONTINUE READING