Low-frequency noise in polymer transistors

@inproceedings{Deen2001LowfrequencyNI,
  title={Low-frequency noise in polymer transistors},
  author={M. J. Deen and Ognian Marinov and Steven Holdcroft and Wayne H. Woods},
  year={2001}
}
The low-frequency noise (LFN) properties of field-effect transistors (FETs) using polymers as the semiconducting substrate material are investigated and explained in terms of the nonstationary mobility /spl mu/ in the semiconducting polymer. In the frequency (f) range f<1 kHz it was found that 1/f noise prevails over other types of LFN in these polymer FETs (PFETs). The spectral density S/sub I/ of LFN of the drain current ID is proportional to the DC power V/sub DS//spl middot/I/sub D/ applied… CONTINUE READING

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