Low Voltage and Fast Program and Erase SONOS with Thick Tunnel Oxide for Low Cost Embedded EEPROM-like Memory Applications

Abstract

We have presented a new programming scheme for thick tunnel oxide (4-6nm) SONOS memories. The programming is done with conventional CHEI while erasing is performed with PAHHI. Low voltage (|VCG|< 5V, VDs=5V) is used for program and erase. The programming scheme is favorable for short CG lengths (LCG< 100 nm) and yields good memory characteristics: 5.5V VT… (More)

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