Low-Temperature Growth of Thin Films of Al2O3 by Sequential Surface Chemical Reaction of trimethylaluminum and H2O2

@inproceedings{Fan1991LowTemperatureGO,
  title={Low-Temperature Growth of Thin Films of Al2O3 by Sequential Surface Chemical Reaction of trimethylaluminum and H2O2},
  author={Jia-Fa Fan and Koji Sugioka and K{\^o}ichi Toyoda},
  year={1991}
}
  • Jia-Fa Fan, Koji Sugioka, Kôichi Toyoda
  • Published 1991
  • Chemistry
  • Hydrogen peroxide (H2O2) was used as the oxidant in a sequential surface-chemical-reaction-limited growth system to obtain high-quality thin films of Al2O3. It is observed that trimethylaluminum (TMA) reacts with H2O2 readily at temperatures as low as room temperature, resulting in the identical growth of Al2O3 wherever the reactants reach. The films are highly insulating and ideally uniform. 

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