Low-Temperature Growth of Highly Crystalline Superconducting ZrN Thin Film on $c$-GaN Layer by Pulsed Laser Deposition

@article{Zhu2007LowTemperatureGO,
  title={Low-Temperature Growth of Highly Crystalline Superconducting ZrN Thin Film on \$c\$-GaN Layer by Pulsed Laser Deposition},
  author={Y. Zhu and M. Ikeda and Y. Murakami and A. Tsukazaki and T. Fukumura and M. Kawasaki},
  journal={Japanese Journal of Applied Physics},
  year={2007},
  volume={46}
}
Superconducting ZrN thin films were fabricated on c-GaN/c-Al2O3 substrates at low growth temperatures ranging from 200 to 300 °C by pulsed laser deposition. ZrN(111) thin films were epitaxially grown on c-GaN/c-Al2O3 substrates, while the growth on c-Al2O3 substrates yielded poorer crystallinity. The use of Zr metal and ZrN targets respectively resulted in higher crystallinity and a higher superconducting transition temperature of up to 7.3 K, indicating that the superconducting transition… Expand
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