Low-Temperature Electron–Phonon Interaction of Quantum Emitters in Hexagonal Boron Nitride

@article{Grosso2019LowTemperatureEI,
  title={Low-Temperature Electron–Phonon Interaction of Quantum Emitters in Hexagonal Boron Nitride},
  author={Gabriele Grosso and Hyowon Moon and Christopher J. Ciccarino and Johannes Flick and Noah Mendelson and Lukas Mennel and Milos Toth and Igor Aharonovich and Prineha Narang and Dirk R. Englund},
  journal={arXiv: Mesoscale and Nanoscale Physics},
  year={2019}
}
Quantum emitters based on atomic defects in layered hexagonal Boron Nitride (hBN) have emerged as promising solid state 'artificial atoms' with atom-like photophysical and quantum optoelectronic properties. Similar to other atom-like emitters, defect-phonon coupling in hBN governs the characteristic single-photon emission and provides an opportunity to investigate the atomic and electronic structure of emitters as well as the coupling of their spin- and charge-dependent electronic states to… 

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References

SHOWING 1-10 OF 46 REFERENCES
Phonon-assisted emission and absorption of individual color centers in hexagonal boron nitride
Defect centers in hexagonal boron nitride represent room-temperature single-photon sources in a layered van der Waals material. These light emitters appear with a wide range of transition energies
Stark Tuning of Single-Photon Emitters in Hexagonal Boron Nitride.
TLDR
By fabricating van der Waals heterostructures of h-BN and graphene, this work demonstrates the electrical control of single-photon emission from atomic defect emitters via the Stark effect and found field-induced discrete modification and stabilization of emission intensity, which were reversibly controllable with an external electric field.
First-principles investigation of quantum emission from hBN defects.
TLDR
DFT and constrained DFT calculations for a range of hBN point defects are performed and it is found that the CBVN defect, in which a carbon atom substitutes a boron atom and the opposite nitrogen atom is removed, is a potential emission source with a HR factor in good agreement with the experimental HR factor.
Magnetic-field-dependent quantum emission in hexagonal boron nitride at room temperature
TLDR
An investigation of spin-related effects in the optical emission from hBN defects, and a magnetic field dependence in the intensity of the photoluminescence spectrum is performed.
Optical Absorption and Emission Mechanisms of Single Defects in Hexagonal Boron Nitride.
TLDR
It is proposed that direct excitations requiring the creation of multiple phonons are inefficient due to the low Huang-Rhys factors in HBN and that these ZPLs are instead excited indirectly via an intermediate electronic state, corroborated by polarization measurements of an individual ZPL excited with two distinct wavelengths that indicate a single ZPL may be excited by multiple mechanisms.
Phonon-induced multicolor correlations in hBN single-photon emitters
Color centers in hexagonal boron nitride have shown enormous promise as single-photon sources, but a clear understanding of electron-phonon interaction dynamics is critical to their development for
Dangling Bonds in Hexagonal Boron Nitride as Single-Photon Emitters.
TLDR
This work proposes boron dangling bonds as the likely source of the observed single-photon emission around 2 eV and predicts a singlet ground state and the existence of a metastable triplet state, in agreement with experiment.
Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride
TLDR
It is demonstrated that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity through suitable material processing.
Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated cathodoluminescence, photoluminescence, and strain mapping
Single photon emitters (SPEs) in solids have emerged as promising candidates for quantum photonic sensing, communications, and computing. Defects in hexagonal boron nitride (hBN) exhibit
First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centres
In this work we present theoretical calculations and analysis of the vibronic structure of the spin-triplet optical transition in diamond nitrogen-vacancy (NV) centres. The electronic structure of
...
1
2
3
4
5
...