Low Resistance Integrated Toroidal Inductors for Power Management

@article{Orlando2006LowRI,
  title={Low Resistance Integrated Toroidal Inductors for Power Management},
  author={Brett Orlando and Rachid Hida and R. Cuchet and Marcel Audoin and Bernard Viala and Daniel Pellissier and Xavier Gagnard and Pascal Ancey},
  journal={INTERMAG 2006 - IEEE International Magnetics Conference},
  year={2006},
  pages={60-60}
}
5.6times5.6times0.5 mm3 integrated toroidal inductors with high L/RDC ratio have been fabricated on Si substrates with microelectronics tools. The realization features thick layer Cu and Ni80Fe20 technologies. Impedance measurements have been performed up to 100 MHz. As a typical result, we show an inductor with L ~ 500 nH up to 10 MHz, RDC ~ 110 mOmega. To our knowledge, it is the best compromise shown so far. This demonstrates the interest of such integrated inductors to replace discrete… CONTINUE READING

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