Low RC-Constant Perforated-Channel HFET

Abstract

The novel HFET design using perforated channel region under the gate reduces drain and source parasitic resistances due to the current spreading effect in the source-gate and gate-drain regions. Demonstrated results for AlGaN/GaN HFET show that the RONCG time constant reduces around two times using simple and robust perforated channel device processing… (More)

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Cite this paper

@article{Simin2014LowRP, title={Low RC-Constant Perforated-Channel HFET}, author={Grigory S. Simin and Mirwazul Islam and M. Gaevski and Jianyu Deng and Remis Gaska and Michael S. Shur}, journal={IEEE Electron Device Letters}, year={2014}, volume={35}, pages={449-451} }