Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors

@inproceedings{Otsuka2011LowPressureDT,
  title={Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors},
  author={Nobuyuki Otsuka and Shuichi Nagai and Manabu Yanagihara and Yasuhiro Uemoto and Daisuke Ueda},
  year={2011}
}
Power concentration due to tremendous chip size reduction requires superior thermal conductivity. We first demonstrate the reduction in junction temperatures in low-pressure direct liquid cooling (LP-DLC) of GaN power devices for high-power and high-voltage switching applications. In the LP-DLC structure, junction temperature reductions of up to 55 K or 100% higher power levels were demonstrated by introducing a working fluid to a package. The thermal resistance has decreased to 28% in the LP… CONTINUE READING

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