Low Power Technology for Power Reduction in Sram Using Read Stability with Reduced Transistor Count for Future Caches

Abstract

This Paper presented Read and write assist techniques are now commonly used to lower the minimum operating voltage (Vmin) of an SRAM. The minimum supply voltage for SRAM cell is limited by write failures (write-ability) or read disturbs failures (cell stability). In the previous work, various SRAM cells are discussed which offer better variability… (More)

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