Low Power Magnetic Full-Adder Based on Spin Transfer Torque MRAM

@article{Deng2013LowPM,
  title={Low Power Magnetic Full-Adder Based on Spin Transfer Torque MRAM},
  author={Erya Deng and Yue Zhang and Jacques-Olivier Klein and Dafine Ravelsona and Claude Chappert and Weisheng Zhao},
  journal={IEEE Transactions on Magnetics},
  year={2013},
  volume={49},
  pages={4982-4987}
}
Power issues have become a major problem of CMOS logic circuits as technology node shrinks below 90 nm. In order to overcome this limitation, emerging logic-in-memory architecture based on nonvolatile memories (NVMs) are being investigated. Spin transfer torque (STT) magnetic random access memory (MRAM) is considered one of the most promising NVMs thanks to its high speed, low power, good endurance, and 3-D back-end integration. This paper presents a novel magnetic full-adder (MFA) design based… CONTINUE READING
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