Low Noise Heterogeneous III‐V‐on‐Silicon‐Nitride Mode‐Locked Comb Laser

  title={Low Noise Heterogeneous III‐V‐on‐Silicon‐Nitride Mode‐Locked Comb Laser},
  author={Stijn Cuyvers and Bahawal Haq and Camiel Op de Beeck and Stijn Poelman and Artur Hermans and Zhengkui Wang and Agnieszka M. Gocalinska and Emanuele Pelucchi and Brian Corbett and Gunther Roelkens and Kasper Van Gasse and Bart Kuyken},
  journal={Laser \& Photonics Reviews},
Generating optical combs in a small form factor is of utmost importance for a wide range of applications such as datacom, LIDAR, and spectroscopy. Electrically powered mode‐locked diode lasers provide combs with a high conversion efficiency, while simultaneously allowing for a dense spectrum of lines. In recent years, a number of integrated chip scale mode‐locked lasers have been demonstrated. However, thus far these devices suffer from significant linear and nonlinear losses in the passive… 
Integrated dual-laser photonic chip for high-purity carrier generation enabling ultrafast terahertz wireless communications
Photonic generation of Terahertz (THz) carriers displays high potential for THz communications with a large tunable range and high modulation bandwidth. While many photonics-based THz generations
Silicon nitride passive and active photonic integrated circuits: trends and prospects
The use of silicon nitride in integrated photonics has rapidly progressed in recent decades. Ultra-low-loss waveguides based on silicon nitride are a favorable platform for the research of nonlinear
Demonstration of an external cavity semiconductor mode-locked laser.
An external cavity structure is adopted to improve the SML noise performance, as well as the flexibility to adjust the repetition rate, in two external cavity SMLs with repetition rates of 255 MHz and 10 GHz.
III-V-on-Silicon-Nitride Mode-Locked Lasers
We demonstrate heterogeneously integrated passively mode-locked lasers by microtransfer printing III-V semiconductor optical amplifiers on a silicon nitride photonic chip. Hereby, dense and low-noise
Numerical Investigation and Design of Electrically-Pumped Self-Pulsing Fano Laser Based on III-V/Silicon Integration
A self-pulsing III-V/silicon laser is designed based on the Fano resonance between a bus-waveguide and a micro-ring resonator, partially covered by the graphene as a nonlinear saturable absorption
Two-step transfer printed single mode DFB laser on LN
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In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available,
Miniaturization of Laser Doppler Vibrometers—A Review
Laser Doppler vibrometry (LDV) is a non-contact vibration measurement technique based on the Doppler effect of the reflected laser beam. Thanks to its feature of high resolution and flexibility, LDV


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High-channel-count 20  GHz passively mode-locked quantum dot laser directly grown on Si with 41  Tbit/s transmission capacity
Low-cost, small-footprint, highly efficient, and mass-producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated
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Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width.
The stable optical pulse train generation by a monolithic passively mode-locked edge-emitting two-section quantum dot laser based on a five-stack InAs/InGaAs dots-in-a-well structure directly grown on an on-axis silicon substrate by solid-source molecular beam epitaxy is reported on.
Micro‐Transfer‐Printed III‐V‐on‐Silicon C‐Band Semiconductor Optical Amplifiers
The micro‐transfer‐printing of prefabricated C‐band semiconductor optical amplifiers (SOAs) on a silicon waveguide circuit is reported. The SOAs are 1.35 mm in length and 40 µm in width. Dense arrays
Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing
The development of ultralow-loss silicon-nitride-based waveguide platforms has enabled the realization of integrated optical filters with unprecedented performance. Such passive circuits, when
Narrow line width frequency comb source based on an injection-locked III-V-on-silicon mode-locked laser.
The optical injection locking of an L-band (∼1580 nm) 4.7 GHz III-V-on-silicon mode-locked laser with a narrow line width continuous wave (CW) source is reported, showing that more than 50 laser lines generated by the mode- Locked laser are coherent with the narrow linewidth CW source.
Broadband electro-optic frequency comb generation in a lithium niobate microring resonator
Using a thin-film lithium niobate photonic platform, an electro-optic frequency comb generator is realized that is capable of producing wide and stable spectra, spanning more frequencies than the entire telecommunications L-band.
Mode-Locked Laser Diodes and Their Monolithic Integration
  • J. Marsh, L. Hou
  • Physics
    IEEE Journal of Selected Topics in Quantum Electronics
  • 2017
We describe mode locked laser diodes (MLLDs) operating from 40 GHz to >1 THz. Below 40 GHz, operation at the fundamental cavity frequency is appropriate, but at higher frequencies harmonic