Low Noise Heterogeneous III‐V‐on‐Silicon‐Nitride Mode‐Locked Comb Laser

@article{Cuyvers2021LowNH,
  title={Low Noise Heterogeneous III‐V‐on‐Silicon‐Nitride Mode‐Locked Comb Laser},
  author={Stijn Cuyvers and Bahawal Haq and Camiel Op de Beeck and Stijn Poelman and Artur Hermans and Zhengkui Wang and Agnieszka M. Gocalinska and Emanuele Pelucchi and Brian Corbett and Gunther Roelkens and Kasper Van Gasse and Bart Kuyken},
  journal={Laser \& Photonics Reviews},
  year={2021},
  volume={15}
}
Generating optical combs in a small form factor is of utmost importance for a wide range of applications such as datacom, LIDAR, and spectroscopy. Electrically powered mode‐locked diode lasers provide combs with a high conversion efficiency, while simultaneously allowing for a dense spectrum of lines. In recent years, a number of integrated chip scale mode‐locked lasers have been demonstrated. However, thus far these devices suffer from significant linear and nonlinear losses in the passive… 
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References

SHOWING 1-10 OF 68 REFERENCES
A III-V-on-Si ultra-dense comb laser
TLDR
A demonstration of a III-V-on-Si comb laser that can function as a compact, low-cost frequency comb generator after frequency stabilization and the use of low-loss passive silicon waveguides enables the integration of a long laser cavity, which enables the laser to be locked in the passive mode at a record-low 1 GHz repetition rate.
High-channel-count 20  GHz passively mode-locked quantum dot laser directly grown on Si with 41  Tbit/s transmission capacity
Low-cost, small-footprint, highly efficient, and mass-producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated
Integrated heterogeneous silicon/III–V mode-locked lasers
The mode-locked laser diode has emerged as a promising candidate as a signal source for photonic radar systems, wireless data transmission, and frequency comb spectroscopy. They have the advantages
Battery-operated integrated frequency comb generator
TLDR
A chip-based integration of microresonators and lasers produces a battery-powered comb generator that does not require external lasers, moveable optics or laboratory set-ups and should enable production of highly portable and robust frequency and timing references, sensors and signal sources.
Passively mode-locked semiconductor quantum dot on silicon laser with 400 Hz RF line width.
TLDR
The stable optical pulse train generation by a monolithic passively mode-locked edge-emitting two-section quantum dot laser based on a five-stack InAs/InGaAs dots-in-a-well structure directly grown on an on-axis silicon substrate by solid-source molecular beam epitaxy is reported on.
Micro‐Transfer‐Printed III‐V‐on‐Silicon C‐Band Semiconductor Optical Amplifiers
The micro‐transfer‐printing of prefabricated C‐band semiconductor optical amplifiers (SOAs) on a silicon waveguide circuit is reported. The SOAs are 1.35 mm in length and 40 µm in width. Dense arrays
Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing
The development of ultralow-loss silicon-nitride-based waveguide platforms has enabled the realization of integrated optical filters with unprecedented performance. Such passive circuits, when
Narrow line width frequency comb source based on an injection-locked III-V-on-silicon mode-locked laser.
TLDR
The optical injection locking of an L-band (∼1580 nm) 4.7 GHz III-V-on-silicon mode-locked laser with a narrow line width continuous wave (CW) source is reported, showing that more than 50 laser lines generated by the mode- Locked laser are coherent with the narrow linewidth CW source.
Broadband electro-optic frequency comb generation in a lithium niobate microring resonator
TLDR
Using a thin-film lithium niobate photonic platform, an electro-optic frequency comb generator is realized that is capable of producing wide and stable spectra, spanning more frequencies than the entire telecommunications L-band.
Mode-Locked Laser Diodes and Their Monolithic Integration
  • J. Marsh, L. Hou
  • Physics
    IEEE Journal of Selected Topics in Quantum Electronics
  • 2017
We describe mode locked laser diodes (MLLDs) operating from 40 GHz to >1 THz. Below 40 GHz, operation at the fundamental cavity frequency is appropriate, but at higher frequencies harmonic
...
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