Low-Noise CMOS single-photon avalanche diodes with 32 ns dead time

@article{Pancheri2007LowNoiseCS,
  title={Low-Noise CMOS single-photon avalanche diodes with 32 ns dead time},
  author={L. Pancheri and D. Stoppa},
  journal={ESSDERC 2007 - 37th European Solid State Device Research Conference},
  year={2007},
  pages={362-365}
}
  • L. Pancheri, D. Stoppa
  • Published 2007
  • Physics
  • ESSDERC 2007 - 37th European Solid State Device Research Conference
The implementation of single-photon avalanche diode detectors (SPAD) in a standard high voltage 0.7-mum CMOS technology is presented. Two different device structures, combined with integrated quenching circuits, have been fabricated and successfully tested. A novel biasing scheme is proposed allowing the reduction of afterpulsing effect and the decrease of minimum device-to-device distance. Good noise performance is obtained for the 100 mum2 active area device where over 50% of the population… Expand
Low-noise single Photon Avalanche Diodes in 0.15 μm CMOS technology
  • L. Pancheri, D. Stoppa
  • Physics
  • 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
  • 2011
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