Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs

@article{Deal2011LowNA,
  title={Low Noise Amplification at 0.67 THz Using 30 nm InP HEMTs},
  author={W. R. Deal and Kevin M. K. H. Leong and Vesna Radisic and Stephen Sarkozy and Ben S. Gorospe and Jane T Lee and P. H. Liu and Wayne Yoshida and Joe Zhou and M. D. Lange and Richard Lai and X. B. Mei},
  journal={IEEE Microwave and Wireless Components Letters},
  year={2011},
  volume={21},
  pages={368-370}
}
In this letter, low noise amplification at 0.67 THz is demonstrated for the first time. A packaged InP High Electron Mobility Transistor (HEMT) amplifier is reported to achieve a noise figure of 13 dB with an associated gain greater than 7 dB at 670 GHz using a high fMAX InP HEMT transistors in a 5 stage coplanar waveguide integrated circuit. A 10-stage version is also reported to reach a peak gain of 30 dB. These results indicate that InP HEMT integrated circuits can be useful at frequencies… CONTINUE READING
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