Low-Leakage-Current AlN/GaN MOSHFETs Using $ \hbox{Al}_{2}\hbox{O}_{3}$ for Increased 2DEG


Metal-oxide-semiconductor heterostructure field effect transistors (MOSHFETs) were fabricated with an AlN/GaN heterostructure grown on Si substrates. A 7-nm Al<sub>2</sub>O<sub>3</sub> serving as both gate dielectric under the gate electrode and passivation layer in the access region was used. It was found that the Al<sub>2</sub>O<sub>3</sub> was superior… (More)


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