Low-Forward-Voltage-Drop 4H-SiC BJTs Without Base Contact Implantation

Bipolar junction transistors (BJTs) of 4H-SiC, with a low collector-emitter forward voltage drop V<sub>CE</sub> have been fabricated without base contact implantation. A comparison of BJTs on the same wafer with and without base contact implantation shows less than 10% higher V<sub>CE</sub> for the BJTs without base contact implantation. Omitting the base… (More)