Low-Capacitance and Fast Turn-on SCR for RF ESD Protection

@article{Lin2008LowCapacitanceAF,
  title={Low-Capacitance and Fast Turn-on SCR for RF ESD Protection},
  author={Chun-Yu Lin and Ming-Dou Ker and Guo-Xuan Meng},
  journal={IEICE Transactions},
  year={2008},
  volume={91-C},
  pages={1321-1330}
}
With the smaller layout area and parasitic capacitance under the same electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in radio-frequency (RF) IC. In this paper, SCR’s with the waffle layout structures are studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the reduced parasitic capacitance and capacitance variation, the… CONTINUE READING
5 Citations
26 References
Similar Papers

Citations

Publications citing this paper.

References

Publications referenced by this paper.
Showing 1-10 of 26 references

ESD: Circuits and Devices

  • S. Voldman
  • Wiley, New York
  • 2006
1 Excerpt

ESD: RF Technology and Circuits

  • S. Voldman
  • Wiley, New York
  • 2006
1 Excerpt

and G

  • M. Natarajan, D. Linten, +7 authors S. Decoutere
  • Groeseneken, “RFCMOS ESD protection and…
  • 2005

Investigation on di ff erent ESD protection strategies devoted to 3 . 3 V RF applications ( 2 GHz ) in a 0 . 18 μ m CMOS process

  • P. Salome C. Richier, G. Mabboux, I. Zaza, A. Juge, P. Mortini
  • Proc . EOS / ESD Symp .
  • 2003

Similar Papers

Loading similar papers…