Low-Capacitance and Fast Turn-on SCR for RF ESD Protection

  title={Low-Capacitance and Fast Turn-on SCR for RF ESD Protection},
  author={Chun-Yu Lin and Ming-Dou Ker and Guo-Xuan Meng},
  journal={IEICE Transactions},
With the smaller layout area and parasitic capacitance under the same electrostatic discharge (ESD) robustness, silicon-controlled rectifier (SCR) has been used as an effective on-chip ESD protection device in radio-frequency (RF) IC. In this paper, SCR’s with the waffle layout structures are studied to minimize the parasitic capacitance and the variation of the parasitic capacitance within ultra-wide band (UWB) frequencies. With the reduced parasitic capacitance and capacitance variation, the… CONTINUE READING
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