Low Capacitance Through-Silicon-Vias With Uniform Benzocyclobutene Insulation Layers

@article{Chen2013LowCT,
  title={Low Capacitance Through-Silicon-Vias With Uniform Benzocyclobutene Insulation Layers},
  author={Qianwen Chen and Cui Huang and Zhimin Tan and Zheyao Wang},
  journal={IEEE Transactions on Components, Packaging and Manufacturing Technology},
  year={2013},
  volume={3},
  pages={724-731}
}
Low capacitance is critical to the electric performance of through-silicon-vias (TSVs). This paper reports the development of a low capacitance TSVs by replacing silicon dioxide insulation layers (liners) with benzocyclobutene (BCB) polymer. The BCB liner TSVs are fabricated by etching deep annular trenches on substrates, void-free filling the trenches with BCB polymer, selective etching the silicon post in the annular trenches, and filling the via with copper. Key fabrication processes… CONTINUE READING
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