Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model

Wide-band-gap semiconductors, such as gallium nitride (GaN) and silicon carbide (SiC), are expected to be used as materials for new switching devices with low loss and high switching speed. The authors have recently developed a GaN-based high-electron-mobility-transistor (HEMT) for application to power electronics. In this paper we present models of a GaN… CONTINUE READING