Long-wavelength infrared photoinduced switching of a resonant tunneling diode using the intersubband transition

@article{Liu1992LongwavelengthIP,
  title={Long-wavelength infrared photoinduced switching of a resonant tunneling diode using the intersubband transition},
  author={H.-C. Liu and A. Steele and M. Buchanan and Z. Wasilewski},
  journal={IEEE Electron Device Letters},
  year={1992},
  volume={13},
  pages={363-365}
}
Voltage switching induced by long-wavelength infrared light from a CO/sub 2/ laser was observed using a double-barrier resonant tunneling diode (RTD) biased in the bistable region and the intersubband transition (IT) between the quantum confined states. Possible optoelectronic and all-optical switching applications involving hysteresis are proposed and discussed.<<ETX>> 

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SHOWING 1-9 OF 9 REFERENCES

Measurements of intersubband photocurrents from quantum wells in asymmetricaldoublebarrier structures

G. C. Aers, M. Buchanan, Z. R. Wasilewski, D. Landheer
  • Phys . Reu . B .
  • 1991

Heterojunction doublebarrier diodes for logic applications

A. A. Lakhani, R. C. Potter
  • Appl . Phys . Lett .
  • 1987

110 - GHz monolithic resonanttunnelingdiode trigger circuit

R. Bouregba
  • IEEE Electron Device Lett .

Picosecond integrated optical logic

J. E. Golub, J. P. Harbison