Locating the avalanche structure and the origin of breakdown generating charge carriers in silicon photomultipliers by using the bias dependent breakdown probability

@article{Otte2018LocatingTA,
  title={Locating the avalanche structure and the origin of breakdown generating charge carriers in silicon photomultipliers by using the bias dependent breakdown probability},
  author={A. Nepomuk Otte and Thanh Phuc Nguyen and J. G. Stansbury},
  journal={Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment},
  year={2018}
}
  • A. OtteT. NguyenJ. Stansbury
  • Published 1 August 2018
  • Physics
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

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