Localized thinning for strain concentration in suspended germanium membranes and optical method for precise thickness measurement

@inproceedings{Vaccaro2018LocalizedTF,
  title={Localized thinning for strain concentration in suspended germanium membranes and optical method for precise thickness measurement},
  author={Pablo O. Vaccaro and Maria Isabel Alonso and Miquel Garriga and Javier Guti{\'e}rrez and Dina Pero and Markus R Wagner and Juan Sebasti{\'a}n Reparaz and Clivia M. Sotomayor Torres and Xavier Vidal and Emily A. Carter and Peter A Lay and Masahiro Yoshimoto and Alejandro R Go{\~n}i},
  year={2018}
}
We deposited Ge layers on (001) Si substrates by molecular beam epitaxy and used them to fabricate suspended membranes with high uniaxial tensile strain. We demonstrate a CMOS-compatible fabrication strategy to increase strain concentration and to eliminate the Ge buffer layer near the Ge/Si hetero-interface deposited at low temperature. This is achieved by a two-steps patterning and selective etching process. First, a bridge and neck shape is patterned in the Ge membrane, then the neck is… CONTINUE READING