Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

@article{Yin2015LocalizationOJ,
  title={Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current},
  author={You Yin and Tao Wang},
  journal={IEEE Transactions on Electron Devices},
  year={2015},
  volume={62},
  pages={2184-2189}
}
In this paper, we intensively investigated the proposed nanocontact phase-change memory (nano-C PCM) with incorporated nanostructures and high-resistivity nanolayer (nano-L) for reducing reset current. The high resistivity was able to be tuned by doping N into the conventional Ge2Sb2Te5 phase-change material. The analysis based on finite-element method… CONTINUE READING