Local doping of silicon using nanoimprint lithography and molecular monolayers.

@article{Voorthuijzen2011LocalDO,
  title={Local doping of silicon using nanoimprint lithography and molecular monolayers.},
  author={W Pim Voorthuijzen and M Deniz Yilmaz and Wouter Johannes Marinus Naber and Jurriaan Huskens and Wilfred G. van der Wiel},
  journal={Advanced materials},
  year={2011},
  volume={23 11},
  pages={1346-50}
}
A vast amount of semiconductor technology is focused on downscaling electronic components according to Moore’s Law. [ 1 ] Silicon’s semiconducting properties largely depend on the concentration of dopant impurities. [ 2 ] Therefore, novel methodologies of selectively introducing dopants to semiconductor materials at the nanometer scale could be benefi cial for the development of smaller integrated circuit components. Conventionally, introducing dopant impurities to silicon is achieved using ion… CONTINUE READING
Highly Cited
This paper has 18 citations. REVIEW CITATIONS