Local-Degradation-Induced Threshold Voltage Shift in Turned-OFF Amorphous InGaZnO Thin Film Transistors Under AC Drain Bias Stress

@article{Kim2015LocalDegradationInducedTV,
  title={Local-Degradation-Induced Threshold Voltage Shift in Turned-OFF Amorphous InGaZnO Thin Film Transistors Under AC Drain Bias Stress},
  author={Jong In Kim and I. T. Cho and Chan-Yong Jeong and Daeun Lee and Hyuck-In Kwon and Keum Dong Jung and Mun Soo Park and Mi Seon Seo and Tae Young Kim and Je Hun Lee and Jong-Ho Lee},
  journal={IEEE Electron Device Letters},
  year={2015},
  volume={36},
  pages={579-581}
}
Local degradation caused by drain bias (VDS) stressing is recently considered as a key issue in amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). In this letter, we investigate the instability of turned-OFF a-IGZO TFTs under ac VDS stressing. The negative threshold voltage shift, which was well fitted by a stretched exponential function, was accelerated with increasing duty cycle despite the same effective stress time. A capacitance measurement reveals that a higher duty cycle induced… CONTINUE READING

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