# Local $V_{\rm th}$ Variability and Scalability in Silicon-on-Thin-BOX (SOTB) CMOS With Small Random-Dopant Fluctuation

• Published 2010 in IEEE Transactions on Electron Devices

#### Abstract

The silicon on thin buried oxide (SOTB) has the smallest V th variation among planar CMOS due to a low-dose channel. This study focuses on evaluating local variability components and searching for the dominant factor after reducing random-dopant fluctuation (RDF) by decreasing impurities in the channel. Improving short-channel-effect immunity is important… (More)

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