Lithographic characterization of the spherical error in an extreme-ultraviolet optic by use of a programmable pupil-fill illuminator.

Abstract

Extreme-ultraviolet (EUV) lithography remains a leading contender for use in the mass production of nanoelectronics at the 32 nm node. Great progress has been made in all areas of EUV lithography, including the crucial issue of fabrication of diffraction-limited optics. To gain an accurate understanding of the projection optic wavefront error in a completed… (More)

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