Liquid phase oxidation on InGaP and its application to InGaP/GaAs HBTs surface passivation

Abstract

A liquid phase oxidation to grow native oxide film on InGaP near room temperature is investigated and characterized. The application as the surface passivation to improve the InGaP/GaAs heterojunction bipolar transistors (HBTs) performance is also demonstrated. In this work, the HBT devices with surface passivation by the native oxide exhibit 700… (More)

7 Figures and Tables

Cite this paper

@article{Lee2005LiquidPO, title={Liquid phase oxidation on InGaP and its application to InGaP/GaAs HBTs surface passivation}, author={Kuan-Wei Lee and Nan-Ying Yang and Kai-Lin Lee and Po-Wen Sze and Mau-Phon Houng and Yeong-Her Wang}, journal={International Conference on Indium Phosphide and Related Materials, 2005}, year={2005}, pages={516-519} }