Liquid phase epitaxy set-up designed for in situ X-ray study of SiGe island growth on (001) Si substrates

Abstract

In situ X-ray examination at a synchrotron beamline of the solution growth of self-assembled SiGe structures on silicon (001) substrates through the backside has been realized by a specific heating equipment and a suitable growth assembly. The furnace allows heating of the growth assembly up to 600 °C. The temperature field and the gas flow in the furnace… (More)

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