Limits to Binary Logic Switch Scaling—A Gedanken Model

Abstract

ion for electron transport switching devices. For example, the field-effect transistor (FET) can be thought of as consisting of two wells (source and drain) separated by a barrier (channel). ZHIRNOV et al.: LIMITS TO BINARY LOGIC SWITCH SCALING—A GEDANKEN MODEL 1935 In this paper, we consider implications for device design at the highest levels of… (More)

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@inproceedings{Zhirnov2001LimitsTB, title={Limits to Binary Logic Switch Scaling—A Gedanken Model}, author={Victor V. Zhirnov and Ralph K. Cavin and James A. Hutchby and George Bourianoff}, year={2001} }