Limitations of Poole–Frenkel Conduction in Bilayer $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ MOS Devices

Abstract

The gate leakage current of metal-oxide-semiconductors (MOSs) composed of hafnium oxide (HfO2) exhibits temperature dependence, which is usually attributed to the standard Poole-Frenkel (P-F) transport model. However, the reported magnitudes of the trap barrier height vary significantly. This paper explores the fundamental challenges associated with… (More)

Topics

8 Figures and Tables

Slides referencing similar topics