Limitations of Poole–Frenkel Conduction in Bilayer $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ MOS Devices


The gate leakage current of metal-oxide-semiconductors (MOSs) composed of hafnium oxide (HfO2) exhibits temperature dependence, which is usually attributed to the standard Poole-Frenkel (P-F) transport model. However, the reported magnitudes of the trap barrier height vary significantly. This paper explores the fundamental challenges associated with… (More)


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