Light irradiation history sensor using amorphous In-Ga-Zn-O thin-film transistor fabricated by high oxygen partial pressure sputtering

Abstract

We propose a light irradiation history sensor using an amorphous In-Ga-Zn-O (α-IGZO) thin-film transistor (TFT) fabricated by high oxygen partial pressure sputtering. The α-IGZO TFT has an interesting property. The Ids-Vgs characteristic shifts positively, and the subthreshold slope becomes steep when the gate bias is applied, whereas the Ids-Vgs… (More)

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