Lifetime Tests and Junction-Temperature Measurement of InGaN Light-Emitting Diodes Using Patterned Sapphire Substrates

@article{Tsai2007LifetimeTA,
  title={Lifetime Tests and Junction-Temperature Measurement of InGaN Light-Emitting Diodes Using Patterned Sapphire Substrates},
  author={P. C. Tsai and R. W. Chuang and Y. M. Su},
  journal={Journal of Lightwave Technology},
  year={2007},
  volume={25},
  pages={591-596}
}
The authors demonstrate nitride-based blue light-emitting diodes with an InGaN/GaN (460 nm) multiple quantum-well structure on the patterned sapphire substrates (PSSs) compared with conventional sapphire substrates (CSSs) using metal-organic chemical vapor deposition. According to full-width at half-maximum of high-resolution X-ray diffraction and transmission electron microscopy micrographs, the dislocation density of GaN epilayers grown on the PSS was lower than those of the CSS. It was found… CONTINUE READING

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