LiNbO3 thin‐film optical waveguide grown by liquid phase epitaxy and its application to second‐harmonic generation

@article{Tamada1991LiNbO3TO,
  title={LiNbO3 thin‐film optical waveguide grown by liquid phase epitaxy and its application to second‐harmonic generation},
  author={Hitoshi Tamada and Atsuo Yamada and Masaki Saitoh},
  journal={Journal of Applied Physics},
  year={1991},
  volume={70},
  pages={2536-2541}
}
LiNbO3 thin‐film optical waveguides with high crystallinity and good surface morphology have been grown on 5 mol % MgO‐doped Z‐plate LiNbO3 substrates by liquid‐phase epitaxy using Li2O‐V2O5 flux. A small lattice mismatch less than 4×10−3 A in the X axis, a small linewidth of 11s in an x‐ray rocking curve, and a perfect mirror surface are realized by choosing a melt composition. Ordinary refractive index no at a wavelength of 0.6328 μm is unchanged (2.287) with melts of different compositions… Expand
LiNbO3 thin‐film optical waveguide grown by liquid phase epitaxy using Li2O‐B2O3 flux
Nearly stoichiometric LiNbO3 thin‐film waveguides with high crystallinity and good surface morphology were grown on a 5 mol % MgO‐doped Z‐plate LiNbO3 substrate by liquid phase epitaxy usingExpand
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The epitaxial growth of LiNbO3 films by the ArF excimer laser ablation is demonstrated to form electro-optic (EO) thin-film waveguides on sapphire and LiTaO3 c-plates. The x- ray diffraction spectraExpand
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Abstract Lithium niobate (LiNbO 3 ) epitaxial thin films of high crystalline quality have been grown on c -plane sapphire substrates by the solid-source MOCVD method. For waveguiding applications,Expand
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The epitaxial system z‐lithium niobate on GaAs(111)A and GaAs(111)B has been demonstrated by in situ pulsed laser deposition both with and without intermediate layers of MgO(111). The in‐planeExpand
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Single-crystal LiNbO3 films were deposited by liquid phase epitaxy (LPE) onto inductively coupled plasma-assisted reactive ion etched (RIE) LiTaO3 substrates. The RIE-etched channels were 6 mu m wideExpand
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TLDR
Channel waveguides and Mach-Zehnder interferometers fabricated in LiNbO(3) by annealed proton exchange showed no variation in insertion loss or switching voltage was observed over 8 months for devices stored at room temperature. Expand
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