Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model

@article{Poiroux2015LetiUTSOI21AC,
  title={Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model},
  author={T. Poiroux and Olivier Rozeau and Patrick Scheer and Sex0301bastien Martinie and M. A. Jaud and Michel Minondo and Andre Juge and J. C. Barbe and Maud Vinet},
  journal={IEEE Transactions on Electron Devices},
  year={2015},
  volume={62},
  pages={2751-2759}
}
A detailed presentation of the latest version of the Leti-UTSOI compact model is provided. Leti-UTSOI2 is the first available model able to describe the behavior of low-doped ultrathin body and buried oxide fully depleted silicon-on-insulator transistors in all bias configurations, including strong forward back bias. In this part, a full analytical calculation of interface potentials, valid for all regimes of independent double-gate device operation, is detailed. This analytical computation… CONTINUE READING