Layer-modulated synthesis of uniform tungsten disulfide nanosheet using gas-phase precursors.
@article{Park2015LayermodulatedSO,
title={Layer-modulated synthesis of uniform tungsten disulfide nanosheet using gas-phase precursors.},
author={Jusang Park and Wonseon Lee and Taejin Choi and Sung Hwan Hwang and Jae Min Myoung and Jae-Hoon Jung and Soo‐Hyun Kim and Hyungjun Kim},
journal={Nanoscale},
year={2015},
volume={7 4},
pages={
1308-13
}
}The synthesis of layered transition-metal-disulfide (MS2, M = Mo, W) nanosheets with layer controllability and large-area uniformity is an essential requirement for their application in electronic and optical devices. In this report, we describe a synthesis process of WS2 nanosheets with layer controllability and high uniformity using chemical vapor deposition (CVD) and WCl6 and H2S as gas-phase precursors. Through this process, we can systematically modulate the thickness of WS2 nanosheets by…
70 Citations
Catalytic Chemical Vapor Deposition of Large-Area Uniform Two-Dimensional Molybdenum Disulfide using Sodium Chloride.
- ChemistryNanotechnology
- 2017
This work synthesizes MoS2 that exhibit a high quality and large area uniformity using chemical vapor deposition (CVD) with volatile S organic compound and NaCl catalysts and demonstrates that the electron mobility and on/off current ratio are comparable to those of previously reportedMoS2 synthesized using CVD.
Developing seedless growth of atomically thin semiconductor layers: Application to transition metal dichalcogenides
- Materials ScienceCeramics International
- 2018
Monolayer Tungsten Disulfide (WS2 ) via Chlorine-Driven Chemical Vapor Transport.
- PhysicsSmall
- 2017
This study demonstrates a growth process that relies on halide-driven vapor transport commonly utilized in bulk crystal growth, requiring only the powder of the desired crystal and appropriate halide salt as precursors, and has the potential to realize other layered materials that are challenging to grow with current processes.
Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films
- Materials Science, Physics
- 2018
Low-temperature and scalable CVD route to WS2 monolayers on SiO2/Si substrates
- Physics
- 2017
Tungsten disulfide (WS2) monolayers are promising for next-generation flat electronics, but few scalable deposition methods are currently available. Here, the authors report the fabrication of…
Optimisation of processing conditions during CVD growth of 2D WS2 films from a chloride precursor
- Materials ScienceJournal of Materials Science
- 2022
Monolayer tungsten disulphide (WS 2 ) is a direct band gap semiconductor which holds promise for a wide range of optoelectronic applications. The large-area growth of WS 2 has previously been…
Transfer-Free Growth of Atomically Thin Transition Metal Disulfides Using a Solution Precursor by a Laser Irradiation Process and Their Application in Low-Power Photodetectors.
- Materials ScienceNano letters
- 2016
A novel method to grow patternable two-dimensional transition metal disulfides (MS2) directly underneath a protective coating layer by spin-coating a liquid chalcogen precursor onto the transition metal oxide layer, followed by a laser irradiation annealing process.
CVD growth of self-assembled 2D and 1D WS2 nanomaterials for the ultrasensitive detection of NO2
- Environmental Science
- 2021
The growth scale and kinetics of WS2 monolayers under varying H2 concentration
- Materials ScienceScientific reports
- 2015
CVD growth of continuous monolayer WS2 films on mm2 scales is demonstrated and effects related to hydrogen (H2) gas concentration during growth are elucidated and etching of the grown WS2 crystals after growth is attributed.
Layer-modulated, wafer scale and continuous ultra-thin WS2 films grown by RF sputtering via post-deposition annealing
- Physics
- 2016
Tungsten disulfide (WS2) is a layered semiconducting material with a tunable bandgap that is promising in next generation nanoelectronics as well as energy harvesting devices. In this study, we…
References
SHOWING 1-10 OF 75 REFERENCES
Layer-controlled, wafer-scale, and conformal synthesis of tungsten disulfide nanosheets using atomic layer deposition.
- PhysicsACS nano
- 2013
This work describes a process for the synthesis of WS2 nanosheets through the sulfurization of an atomic layer deposition (ALD) WO3 film with systematic layer controllability and wafer-level uniformity, and develops aprocess for the fabrication ofWS2 nanotubes by utilizing the high conformality of the ALD process.
Synthesis of Surface-Functionalized WS2 Nanosheets and Performance as Li-Ion Battery Anodes.
- Materials ScienceThe journal of physical chemistry letters
- 2012
This work demonstrates a process that involves the physical separation of weakly bonded WS2 layers by use of a strong acid treatment at 2 mg/mL, followed by quenching in deionized water, and studied the electrochemical behavior of an acid-treated WS2 anode in a lithium half-cell configuration that showed a three-step charge-discharge behavior, characteristic of a conversion reaction.
Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers.
- ChemistryACS nano
- 2013
A controlled thermal reduction-sulfurization method is used to synthesize large-area WS2 sheets with thicknesses ranging from monolayers to a few layers, thus shedding light on the controlled production of heterolayered devices from transition metal chalcogenides.
Low-Temperature Synthesis of n-Type WS2 Thin Films via H2S Plasma Sulfurization of WO3
- Materials Science, Chemistry
- 2014
Thin tungsten disulfide (WS2) films were prepared on SnO2:F (FTO)-coated glass substrates by H2S plasma sulfurization of sputtered WO3. The reactive environment provided by the plasma enabled the…
Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces.
- ChemistryNano letters
- 2013
The growth of high-quality MS2 (M = Mo, W) monolayers is demonstrated using ambient-pressure chemical vapor deposition (APCVD) with the seeding of perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) and a robust technique in transferring the MS2 monolayer samples to diverse surfaces is demonstrated.
Synthesis of graphene films by rapid heating and quenching at ambient pressures and their electrochemical characterization.
- Materials ScienceACS applied materials & interfaces
- 2013
Although graphene films on Ni (Ni-G) showed better Li-cycling ability similar to that of other carbons suggesting that the presence of graphene edge planes (typical of Ni-G") is important in effective uptake and release of Li-ions in these materials, FLG showed reduced lithium-intercalation capacity when compared with SLG, BLG and Bare-Cu suggesting its substrate protective nature.
Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates.
- Materials ScienceNano letters
- 2012
It is reported that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS(2) thin layers with superior electrical performance on insulating substrates.
Evolution of electronic structure in atomically thin sheets of WS2 and WSe2.
- Physics, Materials ScienceACS nano
- 2013
Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion in mono- to few-layer thickness regime. Molybdenum disulfide (MoS(2)) was…
Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers.
- Materials ScienceNature materials
- 2013
The controlled vapour phase synthesis of molybdenum disulphide atomic layers is reported and a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers is elucidated.
Fullerene-like WS(2) nanoparticles and nanotubes by the vapor-phase synthesis of WCl(n) and H(2)S.
- ChemistryNanotechnology
- 2008
The best set of conditions wherein maximum yields of the high quality pure-phase IF-WS(2) nanoparticles and nanotubes are obtained have been identified.






