Layer-by-layer dielectric breakdown of hexagonal boron nitride.

@article{Hattori2015LayerbylayerDB,
  title={Layer-by-layer dielectric breakdown of hexagonal boron nitride.},
  author={Yoshiaki Hattori and Takashi Taniguchi and Kenji Watanabe and Kosuke Nagashio},
  journal={ACS nano},
  year={2015},
  volume={9 1},
  pages={916-21}
}
Hexagonal boron nitride (BN) is widely used as a substrate and gate insulator for two-dimensional (2D) electronic devices. The studies on insulating properties and electrical reliability of BN itself, however, are quite limited. Here, we report a systematic investigation of the dielectric breakdown characteristics of BN using conductive atomic force microscopy. The electric field strength was found to be ∼ 12 MV/cm, which is comparable to that of conventional SiO2 oxides because of the covalent… CONTINUE READING