Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr.

@article{Ye2022LayerDependentIA,
  title={Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr.},
  author={Chen Ye and Cong Wang and Qiong Wu and Sheng Liu and Jiayuan Zhou and Guopeng Wang and Aljoscha Soll and Zdenek Sofer and Ming Yue and Xue Liu and Mingliang Tian and Qihua Xiong and Wei Ji and X. Renshaw Wang},
  journal={ACS nano},
  year={2022}
}
Magnetic van der Waals (vdW) materials possess versatile spin configurations stabilized in reduced dimensions. One magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order, and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in… 

Figures from this paper

References

SHOWING 1-10 OF 36 REFERENCES
Determining the phase diagram of atomically thin layered antiferromagnet CrCl3
TLDR
It is shown that in CrCl3 multilayers, the dependence of the tunnelling conductance on applied magnetic field, temperature and number of layers tracks the evolution of the magnetic state, enabling the magnetic phase diagram to be determined experimentally.
Electrically tunable high Curie temperature two-dimensional ferromagnetism in van der Waals layered crystals
Identifying intrinsic low-dimensional ferromagnets with high magnetic transition temperature and electrically tunable magnetism is crucial for the development of miniaturized spintronics and
Hidden low-temperature magnetic order revealed through magnetotransport in monolayer CrSBr
Magnetic semiconductors are a powerful platform for understanding, utilizing and tuning the interplay between magnetic order and electronic transport. Compared to bulk crystals, two-dimensional
Odd-Even Layer-Number Effect and Layer-Dependent Magnetic Phase Diagrams in MnBi2Te4
The intrinsic magnetic layered topological insulator MnBi2Te4 with nontrivial topological properties and magnetic order has become a promising system for exploring exotic quantum phenomena such as
Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates
TLDR
Reducing the dimensionality of paramagnetic V Se2 results in the emergence of ferromagnetism that is observed in a monolayer and up to room temperature, making VSe2 an attractive material for van der Waals spintronics applications.
Layer-resolved magnetic proximity effect in van der Waals heterostructures
TLDR
A layer-resolved magnetic proximity effect in heterostructures formed by monolayer WSe 2 and bi/trilayer CrI 3 is reported and a way to control proximity effects and probe interfacial magnetic order via van der Waals engineering is revealed.
Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit
Since the discovery of graphene, the family of two-dimensional materials has grown, displaying a broad range of electronic properties. Recent additions include semiconductors with spin–valley
Two-dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2
TLDR
It is demonstrated that Fe3GeTe2 (FGT), an exfoliable vdW magnet, exhibits robust 2D ferromagnetism with strong perpendicular anisotropy when thinned down to a monolayer.
Layer Hall effect in a 2D topological axion antiferromagnet.
TLDR
The results offer new pathways to detect and manipulate the internal spatial structure of fully compensated topological antiferromagnets and represent a first step towards spatial engineering of the Berry phase through effects such as layer-specific moiré potential.
Electrical and thermal generation of spin currents by magnetic bilayer graphene
TLDR
Proximity coupling of bilayer graphene with the 2D interlayer antiferromagnetic CrSBr now enables active generation of spin currents in graphene both electrically and thermally.
...
...