Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr.

@article{Ye2022LayerDependentIA,
  title={Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr.},
  author={Chen Ye and Cong Wang and Qiong Wu and Sheng Liu and Jiayuan Zhou and Guopeng Wang and Aljoscha Soll and Zdenek Sofer and Ming Yue and Xue Liu and Mingliang Tian and Qihua Xiong and Wei Ji and X. Renshaw Wang},
  journal={ACS nano},
  year={2022}
}
Magnetic van der Waals (vdW) materials possess versatile spin configurations stabilized in reduced dimensions. One magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order, and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in… 
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