Lawrence Berkeley National Laboratory Recent Work Title THE INFLUENCE OF CURRENT STRESSING ON THE STRUCTURE OF AG CONTACTS TO GAAS Permalink

@inproceedings{LilientalWeber2013LawrenceBN,
  title={Lawrence Berkeley National Laboratory Recent Work Title THE INFLUENCE OF CURRENT STRESSING ON THE STRUCTURE OF AG CONTACTS TO GAAS Permalink},
  author={Liliental-Weber and A................................................. and Miret-Goutier and N. and Newman and William E. Spicer and J. Washbum and E. R. Weberl},
  year={2013}
}
The stability of Ag Schottky contacts on GaAs after voltage and current stressing has been investigated. The barrier height and its stability against voltage and current stressing were found to depend on the diode fabrication method (metal deposition onto either air-exposed or ultrahigh vacuum cleaved (UHV) substrates). The barrier height of Ag diodes formed on air exposed surfaces is 0.96 e V, and a significant decrease of 70 me V was found upon exposure to voltage and current stressing. In… CONTINUE READING

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