Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy : effect of Ge concentration and biaxial stress

@inproceedings{Portavoce2017LatticeDA,
  title={Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy : effect of Ge concentration and biaxial stress},
  author={A. Portavoce and Piotr Gas and Isabelle Berbezier and Antoine Ronda and Jens Sandahl Christensen and Birgitta A. Svensson},
  year={2017}
}
Si1-xGex/Si1-yGey/Si(100) heterostructures grown by Molecular Beam Epitaxy (MBE) were used in order to study B surface segregation during growth and B lattice diffusion. Ge concentration and stress effects were separated. Analysis of B segregation during growth shows that: i) for layers in epitaxy on (100)Si), B segregation decreases with increasing Ge… CONTINUE READING