Laterally-asymmetric-channel-insulated-shallow-extension-silicon-on-nothing LAC-ISE-SON MOSFET for improved reliability and digital circuit simulation

Abstract

In the present paper, the application of Laterally Asymmetric Channel Insulated Shallow Extension Silicon On Nothing (LAC-ISE-SON) architecture for analog and digital circuits is analyzed. The LAC-ISE-SON architecture shows improved reliability and hot carrier degradation issues as compared to symmetric channel ISE-SON architecture optimized at the same… (More)

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