Lateral insulated-gate bipolar transistor (LIGBT) with a segmented anode structure

@article{Sin1991LateralIB,
  title={Lateral insulated-gate bipolar transistor (LIGBT) with a segmented anode structure},
  author={J. Rituerto Sin and Satyen Mukherjee},
  journal={IEEE Electron Device Letters},
  year={1991},
  volume={12},
  pages={45-47}
}
A novel lateral insulated-gate bipolar transistor (LIGBT) structure, called the segmented anode LIGBT, is presented. In this structure, the anode, which is responsible for the injection of minority carriers for conductivity modulation, is implemented using segments of p/sup +/ and n/sup +/ diffusions along the device width. This segmented design of the anode structure results in higher switching speed and reduction in device size. Depending on the value of the specific ON resistance… CONTINUE READING
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