Lateral Channel Doping Engineering in 0.1um Recessed Channel nMOSFETs


Many researchers have reported the characteristics of 0.1μm nMOSFETs using vertical channel doping engineering[1] and drain engineering in planar and groove gate(elevated S/D)[2] structures. But there has not been an extensive study on the channel doping engineering in the lateral direction of 0.1μm channel length. In this paper, by simulation and… (More)


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