Latecomer Entrepreneurship: a policy perspective

@inproceedings{Hobday2010LatecomerEA,
  title={Latecomer Entrepreneurship: a policy perspective},
  author={Michael Hobday and Fernando Perini},
  year={2010}
}
In a semiconductor memory device with a stacked capacitor structure, a MOS transistor is formed on a substrate to have a gate electrode, a source region and a drain region. An insulating film is formed on the MOS transistor with an opening passing through the insulting film to one of the source and drain regions of the MOS transistor. A conductive storage electrode is formed such that it is connected to the one of the source and drain regions of the MOS transistor and has a first portion… CONTINUE READING

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