Lasing characteristics dependence on in composition of 850 nm (In)GaAs TQWs VCSELs with low power consumption for optical interconnects

Abstract

We investigated lasing characteristics of (In)GaAs TQWs VCSELs with different In composition in terms of low power consumption. The bias current of 10 Gbps operation was reduced by using InGaAs TQWs. 

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