Laser spike annealing and SiGe dummy pattern layout study to improve contact misalignment overlay issue

Abstract

The use of strained SiGe is essential to improve PFET MOS device performance. However, the structure is susceptible to strain relaxation and wafer deformation during thermal annealing. The accumulation of stress in the wafer needs to be controlled to minimize contact misalignment overlay issue. This paper analyzes laser spike annealing impact and SiGe dummy… (More)

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