Laser-recrystallized silicon-on-oxide—The ideal silicon-on-insulator structure for VLSI?

  • H. W. Lam
  • Published 1980 in 1980 International Electron Devices Meeting
Recent work in laser recrystallization of deposited polysilicon on a 1 µm thick oxide layer grown on a silicon wafer has enhanced the hope of achieving a silicon-on-insulator (SOI) material system that is far superior than that of silicon-on-sapphire (SOS) and is suitable for VLSI application. Surface mobility measured in devices fabricated in the laser… (More)