Laser emission with excitonic gain in a ZnO planar microcavity

@article{Guillet2011LaserEW,
  title={Laser emission with excitonic gain in a ZnO planar microcavity},
  author={Thierry Guillet and C. Brimont and Pierre Valvin and Bernard Gil and Thierry Bretagnon and François M{\'e}dard and Martine Mihailovic and Jes'us Z'uniga-P'erez and Mathieu Leroux and Fabrice Semond and Sophie Bouchoule},
  journal={Applied Physics Letters},
  year={2011},
  volume={98},
  pages={211105}
}
The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240 K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process. 

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